| 1. | Electron trapping center
电子俘获中心 |
| 2. | The first step is the creation of trap centers in ultra - thin gate oxides by hot electron injection , and the second step is oxides breakdown induced by hole trapping
首先注入的热电子在超薄栅氧化层中产生陷阱中心，然后空穴陷入陷阱导致超薄栅氧击穿。 |
| 3. | The aluminates are used as the base and the rare earth materials are used as the luminescence center and trap center . the excitation resource can be visible light and man - made light
它以铝酸盐陶瓷材料为基质，以稀土材料作为掺杂元素形成发光中心和陷阱中心，激发光源可以为目光或人造光源。 |
| 4. | This indicated an absence of deep trapping centers . this peak was still observed at room temperature , temperature . the presence of this intrinsic near - band - gap emission line in the pl spectrum even at room temperature is a further indication for the high quality of the epitaxial layer
Znse薄膜样品在77k时，光致发光谱中只观测到了近带边的发射，而且这一发光一直持续到室温，说明在si衬底上lp - mocvd外延生长的znse薄膜具有较高的质量。 |
| 5. | The aluminates are used as the base and the rare earth materials are used as the luminescence center and trap center . the excitation resource can be visible light and man - made light , so this type of long persistent phosphor has the advantages of no - radiation and no need of electricity
它以铝酸盐陶瓷材料为基质，以稀土材料作为掺杂元素形成发光中心和陷阱中心，激发源可以为日光或人造光源，无污染，不消耗电能，是一种高效节能的固体发光显示材料。 |
| 6. | A new model for the growth stage of surface flashover has been developed according to the experimental results , which is based on the solid band theory . it is suggested that the electron multiplication could be attributed to two processes : one is the secondary electron emission avalanche caused by collisional ionization , the other is the micro - discharge caused by the trap centers of insulator . the trap cente
电子倍增的过程与材料的表面态直接相关，材料微观结构的变化和材料的表面处理都能够导致材料表面态的变化，引起材料的表面二次电子发射系数以及材料中陷阶密度和分布的改变，从而影响了电子倍增的过程，并进一步改变或影响了沿面闪络的发展过程。 |
| 7. | The experimental results show that the surface charging is related with the pre - flashover events , the pre - flashover events can bring the change of surface charge distribution . these may be attributed to the micro - discharge caused by the traps in insulator . the charge carriers can be captured by traps , a space electric field will be set up by the trap centers , and the combined electric field may exceed the breakdown electric field of local area , then the micro - discharge will be initiated
分析表明，反向预闪络现象与材料的陷阱分布有关，试样中电极附近的陷阱中心俘获载流子后所形成的空间电场的作用是产生这一现象的原因；预闪络现象和表面带电现象都是由于绝缘子表面陷阱中心俘获载流子形成空间电场造成局部场强过强引发的局部放电形成的。 |
